ON Semiconductor NVBG022N120M3S

安装类型

表面贴装

包装/外壳

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

供应商器件包装

D2PAK-7

Package

Tape & Reel (TR)

Base Product Number

NVBG022

Current - Continuous Drain (Id) @ 25℃

58A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

厂商

onsemi

Power Dissipation (Max)

234W (Tc)

Product Status

活跃

Factory Pack QuantityFactory Pack Quantity

800

Brand

onsemi

Manufacturer

onsemi

Vds - Drain-Source Breakdown Voltage

1.2 kV

Vgs th - Gate-Source Threshold Voltage

4.4 V

Pd - Power Dissipation

234 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 10 V, + 22 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

20 nC

Rds On - Drain-Source Resistance

30 mOhms

Id - Continuous Drain Current

58 A

操作温度

-55°C ~ 175°C (TJ)

系列

Automotive, AEC-Q101

包装

切割胶带

技术

SiCFET (Silicon Carbide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

30mOhm @ 40A, 18V

不同 Id 时 Vgs(th)（最大值）

4.4V @ 20mA

输入电容(Ciss)(Max)@Vds

3200 pF @ 800 V

门极电荷(Qg)(最大)@Vgs

148 nC @ 18 V

漏源电压 (Vdss)

1200 V

场效应管特性

-

产品类别

onsemi