ON Semiconductor NVBG060N065SC1

包装/外壳

D2PAK-7L

安装类型

表面贴装

供应商器件包装

D2PAK-7

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

145 A

Rds On - Drain-Source Resistance

18 mOhms

Vgs - Gate-Source Voltage

- 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

4.3 V

Qg - Gate Charge

283 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

500 W

Channel Mode

Enhancement

Fall Time

9.6 ns

Forward Transconductance - Min

42 S

Factory Pack QuantityFactory Pack Quantity

800

Typical Turn-Off Delay Time

49 ns

Typical Turn-On Delay Time

23 ns

Package

Tape & Reel (TR)

Base Product Number

NVBG060

Current - Continuous Drain (Id) @ 25℃

46A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

厂商

onsemi

Power Dissipation (Max)

170W (Tc)

Product Status

活跃

系列

NVBG060N065SC1

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

70mOhm @ 20A, 18V

不同 Id 时 Vgs(th)（最大值）

4.3V @ 6.5mA

输入电容(Ciss)(Max)@Vds

1473 pF @ 325 V

门极电荷(Qg)(最大)@Vgs

74 nC @ 18 V

上升时间

26 ns

漏源电压 (Vdss)

650 V

场效应管特性

-