ON Semiconductor NVBG089N65S3F

包装/外壳

D2PAK-7L

安装类型

表面贴装

供应商器件包装

D2PAK-7

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

650 V

Id - Continuous Drain Current

37 A

Rds On - Drain-Source Resistance

89 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

5 V

Qg - Gate Charge

74 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

291 W

Channel Mode

Enhancement

Fall Time

5 ns

Forward Transconductance - Min

21 S

Factory Pack QuantityFactory Pack Quantity

800

Typical Turn-Off Delay Time

81 ns

Typical Turn-On Delay Time

34 ns

Package

Tape & Reel (TR)

Base Product Number

NVBG089

Current - Continuous Drain (Id) @ 25℃

37A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

onsemi

Power Dissipation (Max)

291W (Tc)

Product Status

活跃

系列

NVBG089N65S3F

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

89mOhm @ 18.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 970µA

输入电容(Ciss)(Max)@Vds

3598 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

74 nC @ 10 V

上升时间

26 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

场效应管特性

-