ON Semiconductor NVD14N03RT4G

生命周期状态

Obsolete (Last Updated: 2 years ago)

包装/外壳

TO-252-3

引脚数

3

Continuous Drain Current Id

14

Manufacturer Lifecycle Status

OBSOLETE (Last Updated: 2 years ago)

RoHS

Compliant

Turn Off Delay Time

9.6 ns

Vds - Drain-Source Breakdown Voltage

25 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qualification

AEC-Q101

Pd - Power Dissipation

20.8 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

SVD14N03RT4G

Manufacturer

onsemi

Brand

onsemi

Qg - Gate Charge

1.8 nC

Rds On - Drain-Source Resistance

70.4 mOhms

Id - Continuous Drain Current

14 A

Package

Bulk

厂商

onsemi

Product Status

活跃

包装

Tape & Reel

系列

NTD14N03R

最高工作温度

150 °C

最小工作温度

-55 °C

子类别

MOSFETs

最大功率耗散

1.04 W

技术

Si

通道数量

1 Channel

元素配置

Single

功率耗散

20.8

接通延迟时间

3.8 ns

上升时间

27 ns

漏源电压 (Vdss)

25 V

产品类别

MOSFET

连续放电电流(ID)

2.5 A

栅极至源极电压(Vgs)

20 V

输入电容

115 pF

信道型

N

最大rds

95 mΩ

产品类别

MOSFET

辐射硬化

无

无铅

无铅