ON Semiconductor NVD5802NT4G-TB01
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NVD5802NT4G-TB01
1807-NVD5802NT4G-TB01
晶体管 - FET,MOSFET - 单个
TO-252-3, DPak (2 Leads + Tab), SC-63
大陆
立即发货

MOSFET N-CH 40V 101A DPAK
1最小包装量--
NVD5802NT4G-TB01详情
ON Semiconductor NVD5802NT4G-TB01重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Continuous Drain (Id) @ 25℃
16.4A Ta 101A Tc
Drive Voltage (Max Rds On, Min Rds On)
5V 10V
Power Dissipation (Max)
2.5W Ta 93.75W Tc
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
系列
Automotive, AEC-Q101
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
4.4m Ω @ 50A, 10V
不同 Id 时 Vgs(th)(最大值)
3.5V @ 250μA
输入电容(Ciss)(Max)@Vds
5300pF @ 12V
门极电荷(Qg)(最大)@Vgs
100nC @ 10V
漏源电压 (Vdss)
40V
Vgs(最大值)
±20V
RoHS状态
ROHS3 Compliant
NVD5802NT4G-TB01拓展信息
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哦! 它是空的。