ON Semiconductor NVLJWD023N04CLTAG

包装/外壳

WDFNW-6

安装类型

Surface Mount, Wettable Flank

供应商器件包装

6-WDFNW (2.2x2.3)

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Id - Continuous Drain Current

25 A

Rds On - Drain-Source Resistance

33 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

9 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

24 W

Channel Mode

Enhancement

Fall Time

3 ns

Forward Transconductance - Min

17 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

16 ns

Typical Turn-On Delay Time

5 ns

Package

Tape & Reel (TR)

Base Product Number

NVLJWD023

Current - Continuous Drain (Id) @ 25℃

7A (Ta), 25A (Tc)

厂商

onsemi

Product Status

活跃

系列

NVLJWD023N04CL

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta), 24W (Tc)

Rds On(Max)@Id,Vgs

23mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 13µA

输入电容(Ciss)(Max)@Vds

440pF @ 25V

门极电荷(Qg)(最大)@Vgs

9nC @ 10V

上升时间

2 ns

漏源电压 (Vdss)

40V

场效应管特性

-