ON Semiconductor NVLJWS013N03CLTAG

包装/外壳

WDFNW-6

安装类型

Surface Mount, Wettable Flank

供应商器件包装

6-WDFNW (2.05x2.05)

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

35 A

Rds On - Drain-Source Resistance

18 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

10 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

27 W

Channel Mode

Enhancement

Fall Time

3 ns

Forward Transconductance - Min

27 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

18 ns

Typical Turn-On Delay Time

7 ns

Package

Tape & Reel (TR)

Base Product Number

NVLJWS013

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

2.4W (Ta), 27W (Tc)

Product Status

活跃

系列

NVLJWS013N03CL

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

13mOhm @ 8A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 250µA

输入电容(Ciss)(Max)@Vds

600 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

10 nC @ 10 V

上升时间

2 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

场效应管特性

-