ON Semiconductor NVLJWS070N06CLTAG

包装/外壳

WDFN-6

安装类型

Surface Mount, Wettable Flank

供应商器件包装

6-WDFNW (2.05x2.05)

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - Continuous Drain Current

4.4 A

Rds On - Drain-Source Resistance

85 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2 V

Qg - Gate Charge

18 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

15 W

Channel Mode

Enhancement

Fall Time

1.3 ns

Forward Transconductance - Min

11 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

9.4 ns

Typical Turn-On Delay Time

4.4 ns

Package

Tape & Reel (TR)

Base Product Number

NVLJWS070

Current - Continuous Drain (Id) @ 25℃

4.4A (Ta), 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

2.4W (Ta), 15W (Tc)

Product Status

活跃

系列

NVLJWS070N06CL

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

62mOhm @ 5A, 10V

不同 Id 时 Vgs(th)（最大值）

2V @ 6µA

输入电容(Ciss)(Max)@Vds

160 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

18 nC @ 10 V

上升时间

1.3 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

场效应管特性

-