ON Semiconductor NVMFWS004N10MCT1G
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NVMFWS004N10MCT1G
1807-NVMFWS004N10MCT1G
晶体管 - FET,MOSFET - 单个
8-PowerTDFN, 5 Leads
大陆
立即发货

MOSFET N-CH 100V 5DFN
1最小包装量--
NVMFWS004N10MCT1G详情
ON Semiconductor NVMFWS004N10MCT1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Surface Mount, Wettable Flank
包装/外壳
8-PowerTDFN, 5 Leads
供应商器件包装
5-DFNW (4.9x5.9) (8-SOFL-WF)
Base Product Number
NVMFWS004
Current - Continuous Drain (Id) @ 25℃
21A (Ta), 138A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
onsemi
Package
Tape & Reel (TR)
Power Dissipation (Max)
3.8W (Ta), 164W (Tc)
Product Status
活跃
操作温度
-55°C ~ 175°C (TJ)
系列
Automotive, AEC-Q101
技术
MOSFET (Metal Oxide)
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
3.9mOhm @ 48A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 270µA
输入电容(Ciss)(Max)@Vds
3600 pF @ 50 V
门极电荷(Qg)(最大)@Vgs
48 nC @ 10 V
漏源电压 (Vdss)
100 V
Vgs(最大值)
±20V
场效应管特性
-
NVMFWS004N10MCT1G拓展信息
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