ON Semiconductor NVMFWS9D6P04M8LT1G

包装/外壳

SO-8FL

安装类型

Surface Mount, Wettable Flank

供应商器件包装

5-DFNW (4.9x5.9) (8-SOFL-WF)

Mounting Styles

SMD/SMT

Transistor Polarity

P-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Id - Continuous Drain Current

77 A

Rds On - Drain-Source Resistance

9.5 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.4 V

Qg - Gate Charge

15.04 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

75 W

Channel Mode

Enhancement

Fall Time

63 ns

Forward Transconductance - Min

36 S

Factory Pack QuantityFactory Pack Quantity

1500

Typical Turn-Off Delay Time

83.3 ns

Typical Turn-On Delay Time

13.1 ns

Package

Tape & Reel (TR)

Base Product Number

NVMFWS9

Current - Continuous Drain (Id) @ 25℃

17.1A (Ta), 77A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

3.7W (Ta), 75W (Tc)

Product Status

活跃

系列

NVMFS9D6P04M8L

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

9.5mOhm @ 20A, 10V

不同 Id 时 Vgs(th)（最大值）

2.4V @ 580µA

输入电容(Ciss)(Max)@Vds

2002 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

14.47 nC @ 10 V

上升时间

103 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

场效应管特性

-