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价格梯度
内地含税价
1
¥9.699573
10
¥9.150541
100
¥8.632584
500
¥8.143949
1000
¥7.682969
ON Semiconductor NVMJD012N06CLTWG
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NVMJD012N06CLTWG
1807-NVMJD012N06CLTWG
晶体管 - FET,MOSFET - 单个
LFPAK-8
大陆
立即发货

MOSFET T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE
--最小包装量--
¥
总价: ¥
NVMJD012N06CLTWG详情
ON Semiconductor NVMJD012N06CLTWG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
LFPAK-8
安装类型
表面贴装
供应商器件包装
8-LFPAK
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
42 A
Rds On - Drain-Source Resistance
16.8 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Qg - Gate Charge
11.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
42 W
Channel Mode
Enhancement
Fall Time
5 ns
Factory Pack QuantityFactory Pack Quantity
3000
Typical Turn-Off Delay Time
13 ns
Typical Turn-On Delay Time
10 ns
Package
Tape & Reel (TR)
Base Product Number
NVMJD012
Current - Continuous Drain (Id) @ 25℃
11.5A (Ta), 42A (Tc)
厂商
onsemi
Product Status
活跃
系列
NVMJD012N06CL
包装
Reel
操作温度
-55°C ~ 175°C (TJ)
配置
Dual
通道数量
2 Channel
功率 - 最大
3.2W (Ta), 42W (Tc)
Rds On(Max)@Id,Vgs
11.9mOhm @ 25A, 10V
不同 Id 时 Vgs(th)(最大值)
2.2V @ 30µA
输入电容(Ciss)(Max)@Vds
792pF @ 25V
门极电荷(Qg)(最大)@Vgs
11.5nC @ 10V
上升时间
7 ns
漏源电压 (Vdss)
60V
场效应管特性
-
NVMJD012N06CLTWG拓展信息
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哦! 它是空的。