ON Semiconductor NVMJD015N06CLTWG

包装/外壳

LFPAK-8

安装类型

表面贴装

供应商器件包装

8-LFPAK

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

60 V

Id - Continuous Drain Current

35 A

Rds On - Drain-Source Resistance

20.4 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

2.2 V

Qg - Gate Charge

9.4 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

37 W

Channel Mode

Enhancement

Fall Time

5 ns

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

12 ns

Typical Turn-On Delay Time

9.1 ns

Package

Tape & Reel (TR)

Base Product Number

NVMJD015

Current - Continuous Drain (Id) @ 25℃

10.1A (Ta), 35A (Tc)

厂商

onsemi

Product Status

活跃

系列

NVMJD015N06CL

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Dual

通道数量

2 Channel

功率 - 最大

3.1W (Ta), 37W (Tc)

Rds On(Max)@Id,Vgs

14.4mOhm @ 17A, 10V

不同 Id 时 Vgs(th)（最大值）

2.2V @ 25µA

输入电容(Ciss)(Max)@Vds

643pF @ 30V

门极电荷(Qg)(最大)@Vgs

9.4nC @ 10V

上升时间

36.1 ns

漏源电压 (Vdss)

60V

场效应管特性

-