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内地含税价
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¥6.81934
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¥6.433338
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¥6.069188
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¥5.725653
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¥5.401556
ON Semiconductor NVMJD027N06CLTWG
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NVMJD027N06CLTWG
1807-NVMJD027N06CLTWG
晶体管 - FET,MOSFET - 单个
LFPAK-8
大陆
立即发货

MOSFET T6 60V N-CH LL IN LFPAK56 DUALS PACKAGE
--最小包装量--
¥
总价: ¥
NVMJD027N06CLTWG详情
ON Semiconductor NVMJD027N06CLTWG重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
LFPAK-8
安装类型
表面贴装
供应商器件包装
8-LFPAK
Mounting Styles
SMD/SMT
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
40 V
Id - Continuous Drain Current
21 A
Rds On - Drain-Source Resistance
41 mOhms
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage
2.2 V
Qg - Gate Charge
5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
24 W
Channel Mode
Enhancement
Fall Time
3 ns
Factory Pack QuantityFactory Pack Quantity
3000
Typical Turn-Off Delay Time
8.2 ns
Typical Turn-On Delay Time
6.8 ns
Package
Tape & Reel (TR)
Base Product Number
NVMJD027
Current - Continuous Drain (Id) @ 25℃
7.7A (Ta), 21A (Tc)
厂商
onsemi
Product Status
活跃
系列
NVMJD027N06CL
包装
Reel
操作温度
-55°C ~ 175°C (TJ)
配置
Dual
通道数量
2 Channel
功率 - 最大
3.2W (Ta), 24W (Tc)
Rds On(Max)@Id,Vgs
27mOhm @ 9A, 10V
不同 Id 时 Vgs(th)(最大值)
2.2V @ 13µA
输入电容(Ciss)(Max)@Vds
335pF @ 30V
门极电荷(Qg)(最大)@Vgs
5nC @ 10V
上升时间
6 ns
漏源电压 (Vdss)
60V
场效应管特性
-
NVMJD027N06CLTWG拓展信息
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哦! 它是空的。