ON Semiconductor NVMYS005N10MCLTWG

包装/外壳

LFPAK-4

安装类型

表面贴装

供应商器件包装

LFPAK4 (5x6)

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

100 V

Id - Continuous Drain Current

108 A

Rds On - Drain-Source Resistance

7.1 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

26 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

131 W

Channel Mode

Enhancement

Fall Time

12.3 ns

Forward Transconductance - Min

155 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

57 ns

Typical Turn-On Delay Time

17 ns

Product Status

活跃

Power Dissipation (Max)

3.8W (Ta), 131W (Tc)

厂商

onsemi

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Current - Continuous Drain (Id) @ 25℃

18.4A (Ta), 108A (Tc)

Base Product Number

NVMYS005

Package

Tape & Reel (TR)

系列

NVMYS005N10MCL

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

5.1mOhm @ 34A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 192µA

输入电容(Ciss)(Max)@Vds

4100 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

55 nC @ 10 V

上升时间

6.7 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-