ON Semiconductor NVMYS007N10MCLTWG

包装/外壳

LFPAK-4

安装类型

表面贴装

供应商器件包装

LFPAK4 (5x6)

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

100 V

Id - Continuous Drain Current

16 A

Rds On - Drain-Source Resistance

10 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

37 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

107 W

Channel Mode

Enhancement

Fall Time

11.5 ns

Forward Transconductance - Min

100 S

Factory Pack QuantityFactory Pack Quantity

3000

Typical Turn-Off Delay Time

45.7 ns

Typical Turn-On Delay Time

12.2 nC

Package

Tape & Reel (TR)

Base Product Number

NVMYS007

Current - Continuous Drain (Id) @ 25℃

16A (Ta), 83A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

onsemi

Power Dissipation (Max)

3.8W (Ta), 107W (Tc)

Product Status

活跃

系列

NVMYS007N10MCL

包装

Reel

操作温度

-55°C ~ 175°C (TJ)

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

7mOhm @ 25A, 10V

不同 Id 时 Vgs(th)（最大值）

3V @ 141µA

输入电容(Ciss)(Max)@Vds

2700 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

37 nC @ 10 V

上升时间

6.5 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

场效应管特性

-