Panjit P4KE300C_R2_10001

包装/外壳

TO-262-3

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

200 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.084199 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

HUF75639S3_NL

Manufacturer

onsemi

Brand

onsemi / Fairchild

Qg - Gate Charge

130 nC

Tradename

UltraFET

Rds On - Drain-Source Resistance

25 mOhms

RoHS

Details

Typical Turn-Off Delay Time

20 ns

Id - Continuous Drain Current

56 A

Breakdown Voltage / V

270 V

Vesd - Voltage ESD Contact

30 kV

Ipp - Peak Pulse Current

900 mA

Pppm - Peak Pulse Power Dissipation

400 W

Vesd - Voltage ESD Air Gap

30 kV

系列

HUF75639S3

包装

Tube

类型

MOSFET

子类别

MOSFETs

技术

Si

终端样式

Axial

工作电压

243 V

极性

双向

配置

Single

通道数量

1 Channel

箝位电压

430 V

上升时间

60 ns

产品类别

MOSFET

晶体管类型

1 N-Channel

产品类别

MOSFET

宽度

4.83 mm

高度

7.88 mm

长度

10.29 mm