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价格梯度
内地含税价
1
¥1.556505
10
¥1.468399
100
¥1.385285
500
¥1.306873
1000
¥1.232897
PJA3428_R1_00001详情
Panjit PJA3428_R1_00001重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
SOT-23-3
安装类型
表面贴装
供应商器件包装
SOT-23
Vds - Drain-Source Breakdown Voltage
30 V
Typical Turn-On Delay Time
8.3 ns
Vgs th - Gate-Source Threshold Voltage
1 V
Pd - Power Dissipation
500 mW
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 10 V, + 10 V
Unit Weight
0.000282 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
900 pC
Rds On - Drain-Source Resistance
4 Ohms
RoHS
Details
Typical Turn-Off Delay Time
35 ns
Id - Continuous Drain Current
300 mA
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
300mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.2V, 4.5V
厂商
Panjit International Inc.
Power Dissipation (Max)
500mW (Ta)
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
1V @ 250µA
Product Status
活跃
系列
NFET-30TMN
包装
MouseReel
操作温度
-55°C ~ 150°C (TJ)
子类别
MOSFETs
技术
Si
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1.2Ohm @ 300mA, 4.5V
输入电容(Ciss)(Max)@Vds
45 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
0.9 nC @ 10 V
上升时间
5.7 ns
漏源电压 (Vdss)
30 V
Vgs(最大值)
±10V
产品类别
MOSFET
晶体管类型
1 N-Channel
场效应管特性
-
产品类别
MOSFET
PJA3428_R1_00001拓展信息
Panjit
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Panjit
Panjit
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