Panjit PJA3471_R1_00001

包装/外壳

SOT-23-3

安装类型

表面贴装

供应商器件包装

SOT-23

Voltage, Rating

150 V

Vds - Drain-Source Breakdown Voltage

100 V

Typical Turn-On Delay Time

3.7 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

8 nC

Rds On - Drain-Source Resistance

650 mOhms

RoHS

Details

Typical Turn-Off Delay Time

21 ns

Id - Continuous Drain Current

900 mA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

900mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

1.25W (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

系列

NFET-100TMP

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

容差

0.1 %

温度系数

50 ppm/°C

电阻

191 kΩ

最高工作温度

155 °C

最小工作温度

-55 °C

组成

Thin Film

子类别

MOSFETs

额定功率

500 mW

技术

Si

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

650mOhm @ 900mA, 10V

输入电容(Ciss)(Max)@Vds

448 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

8 nC @ 10 V

上升时间

25 ns

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

场效应管特性

-

产品类别

MOSFET

高度

650 µm