Panjit PJD11N06A_L2_00001

底架

Cable

包装/外壳

TO-252AA-3

安装类型

表面贴装

供应商器件包装

TO-252

RoHS

Compliant

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

3.2 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.010476 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

9.3 nC

Rds On - Drain-Source Resistance

90 mOhms

Typical Turn-Off Delay Time

18.5 ns

Id - Continuous Drain Current

11 A

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 25W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

Current - Continuous Drain (Id) @ 25℃

3.7A (Ta), 11A (Tc)

系列

NFET-60SMN

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

终端

Solder

性别

Male

子类别

MOSFETs

技术

Si

方向

Straight

接头数量

6

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

75mOhm @ 6A, 10V

输入电容(Ciss)(Max)@Vds

509 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

9.3 nC @ 10 V

上升时间

9.7 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET

辐射硬化

无