Panjit PJD2NA60_L2_00001

包装/外壳

TO-252AA-3

安装类型

表面贴装

供应商器件包装

TO-252

Package

零售包装

厂商

Glenair

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

10 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

34 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.010476 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

5.7 nC

Rds On - Drain-Source Resistance

4.4 Ohms

RoHS

Details

Typical Turn-Off Delay Time

16 ns

Id - Continuous Drain Current

2 A

Current - Continuous Drain (Id) @ 25℃

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

34W (Tc)

系列

*

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.4Ohm @ 1A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

257 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

5.7 nC @ 10 V

上升时间

24 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET