Panjit PJD4NA65_L2_00001

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

77W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

77 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

11.4 nC

Rds On - Drain-Source Resistance

2.7 Ohms

Id - Continuous Drain Current

4 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

2.7Ohm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

463 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

11.4 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

场效应管特性

-