PJD7NA60_L2_00001详情
Panjit PJD7NA60_L2_00001重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
TO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件包装
TO-252
Package
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;
Current - Continuous Drain (Id) @ 25℃
7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
厂商
Panjit International Inc.
Power Dissipation (Max)
140W (Tc)
Product Status
不用于新设计
Vds - Drain-Source Breakdown Voltage
600 V
Typical Turn-On Delay Time
28 ns
Vgs th - Gate-Source Threshold Voltage
4 V
Pd - Power Dissipation
140 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 30 V, + 30 V
Unit Weight
0.010476 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
3000
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Manufacturer
Panjit
Brand
Panjit
Qg - Gate Charge
15.2 nC
Rds On - Drain-Source Resistance
1.2 Ohms
RoHS
Details
Typical Turn-Off Delay Time
42 ns
Id - Continuous Drain Current
7 A
操作温度
-55°C ~ 150°C (TJ)
系列
-
包装
Reel
子类别
MOSFETs
技术
MOSFET (Metal Oxide)
配置
Single
通道数量
1 Channel
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
1.2Ohm @ 3.5A, 10V
不同 Id 时 Vgs(th)(最大值)
4V @ 250µA
输入电容(Ciss)(Max)@Vds
723 pF @ 25 V
门极电荷(Qg)(最大)@Vgs
15.2 nC @ 10 V
上升时间
58 ns
漏源电压 (Vdss)
600 V
Vgs(最大值)
±30V
产品类别
MOSFET
晶体管类型
1 N-Channel
场效应管特性
-
产品类别
MOSFET
PJD7NA60_L2_00001拓展信息
Panjit
Panjit
Panjit
Panjit
Panjit
Panjit
Panjit
Panjit
Panjit
Panjit








哦! 它是空的。