Panjit PJE8412_R1_00001

安装类型

通孔

包装/外壳

SOT-523-3

供应商器件包装

SOT-523

MSL

-

RoHS

有

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7.1 ns

Vgs th - Gate-Source Threshold Voltage

1.1 V

Pd - Power Dissipation

300 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Unit Weight

0.000071 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

870 pC

Rds On - Drain-Source Resistance

2.3 Ohms

Typical Turn-Off Delay Time

41 ns

Id - Continuous Drain Current

350 mA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

350mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

厂商

Panjit International Inc.

Power Dissipation (Max)

300mW (Ta)

Product Status

不用于新设计

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1.1V @ 250µA

系列

LTC10

包装

Reel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Single

注意

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.2Ohm @ 350mA, 4.5V

输入电容(Ciss)(Max)@Vds

34 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

0.87 nC @ 4.5 V

上升时间

20 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±10V

决议案

10bit

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

产品类别

MOSFET