Panjit PJE8438_R1_00001

包装/外壳

SOT-523-3

安装类型

表面贴装

供应商器件包装

SOT-523

Dimensions

D1,9x3,4mm

Insulation Voltage

300 V

RoHS

有

Vds - Drain-Source Breakdown Voltage

50 V

Typical Turn-On Delay Time

2.3 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

300 mW

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000071 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

950 pC

Rds On - Drain-Source Resistance

6 Ohms

Typical Turn-Off Delay Time

7 ns

Id - Continuous Drain Current

360 mA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

360mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

300mW (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

1V @ 250µA

系列

n/a

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

容差

±1 %

电阻

560 Ohm

组成

Metal Film

子类别

MOSFETs

技术

Si

终端样式

Axial

配置

Single

注意

n/a

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.45Ohm @ 500mA, 10V

输入电容(Ciss)(Max)@Vds

36 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

0.95 nC @ 4.5 V

大小

0204

上升时间

20 ns

漏源电压 (Vdss)

50 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

额定功率

0,4 W

产品类别

MOSFET