Panjit PJL9401_R2_00001

安装类型

表面贴装

包装/外壳

8-SOIC (0.154, 3.90mm Width)

供应商器件包装

8-SOP

RoHS

Non-Compliant

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2.1W (Ta)

Product Status

不用于新设计

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.1V @ 250µA

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

2.1 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

9.8 nC

Rds On - Drain-Source Resistance

110 mOhms

Id - Continuous Drain Current

3 A

操作温度

-55°C ~ 150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

110mOhm @ 3A, 10V

输入电容(Ciss)(Max)@Vds

396 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

9.8 nC @ 10 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

场效应管特性

-