Panjit PJMD990N65EC_L2_00001

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252AA

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

47.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.010476 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

6000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

9.7 nC

Rds On - Drain-Source Resistance

990 Ohms

RoHS

Details

Id - Continuous Drain Current

4.7 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

4.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

47.5W (Tc)

Product Status

活跃

系列

650V SJ MOSFET

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

性别

Female

子类别

MOSFETs

技术

Si

触点样式

Pin

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

990mOhm @ 2A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

306 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

9.7 nC @ 10 V

漏源电压 (Vdss)

650 V

Vgs（最大值）

±30V

产品类别

MOSFET

场效应管特性

-

产品

MOSFET

产品类别

MOSFET