Panjit PJP3NA80_T0_00001

包装/外壳

TO-220AB-3

安装类型

通孔

供应商器件包装

TO-220AB

MSL

-

Dimensions

9,7x5x9,8mm

RoHS

有

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

9.8 ns

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

106 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Unit Weight

0.068784 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

11 nC

Rds On - Drain-Source Resistance

4.8 Ohms

Typical Turn-Off Delay Time

18 ns

Id - Continuous Drain Current

3 A

Package

Tube

Current - Continuous Drain (Id) @ 25℃

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Panjit International Inc.

Power Dissipation (Max)

106W (Tc)

Product Status

活跃

操作温度

-55...+155°C

系列

64Y

包装

Tube

容差

±10 %

类型

Trimmer

电阻

20.0 kOhm

组成

Cermet

子类别

MOSFETs

技术

Si

终端样式

THT

配置

Single

注意

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.8Ohm @ 1.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 250µA

输入电容(Ciss)(Max)@Vds

406 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

11 nC @ 10 V

上升时间

23 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

产品类别

MOSFET

晶体管类型

1 N-Channel

转弯数量

25

场效应管特性

-

额定功率

0,5 W

产品类别

MOSFET