Panjit PJQ5411_R2_00001

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

DFN5060-8

Voltage, Rating

150 V

Vds - Drain-Source Breakdown Voltage

30 V

Moisture Sensitive

有

Vgs th - Gate-Source Threshold Voltage

2.5 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.002822 oz

Factory Pack QuantityFactory Pack Quantity

3000

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

14 nC

Rds On - Drain-Source Resistance

15.5 mOhms

RoHS

Details

Id - Continuous Drain Current

45 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

10A (Ta), 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

2W (Ta), 40W (Tc)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250µA

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

系列

-

容差

1 %

温度系数

100 ppm/°C

电阻

3.83 Ω

最高工作温度

155 °C

最小工作温度

-55 °C

组成

Thin Film

子类别

MOSFETs

额定功率

125 mW

技术

Si

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

15.5mOhm @ 10A, 10V

输入电容(Ciss)(Max)@Vds

1556 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

14 nC @ 4.5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET

高度

650 µm