Panjit PJS6601_S1_00001

包装/外壳

SOT-23-6

Vds - Drain-Source Breakdown Voltage

20 V

Vgs th - Gate-Source Threshold Voltage

1.2 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

N-Channel, P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

4.6 nC, 5.4 nC

Rds On - Drain-Source Resistance

56 mOhms, 100 mOhms

Id - Continuous Drain Current

4.1 A, 3.1 A

技术

Si

通道数量

2 Channel