Panjit PJT7802_R1_00001

包装/外壳

SOT-363-6

安装类型

表面贴装

供应商器件包装

SOT-363

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

900 pC

Rds On - Drain-Source Resistance

700 mOhms

RoHS

Details

Typical Turn-Off Delay Time

7 ns

Id - Continuous Drain Current

500 mA

Minimum Operating Temperature

- 55 C

Unit Weight

0.000265 oz

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

350 mW

Vgs th - Gate-Source Threshold Voltage

1 V

Typical Turn-On Delay Time

3 ns

Vds - Drain-Source Breakdown Voltage

20 V

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

500mA (Ta)

厂商

Panjit International Inc.

Product Status

不用于新设计

包装

Reel

系列

NFET-20TSMN

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Dual

通道数量

2 Channel

功率 - 最大

350mW (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

400mOhm @ 500mA, 4.5V

不同 Id 时 Vgs(th)（最大值）

1V @ 250µA

输入电容(Ciss)(Max)@Vds

39pF @ 10V

门极电荷(Qg)(最大)@Vgs

0.9nC @ 4.5V

上升时间

22 ns

漏源电压 (Vdss)

20V

产品类别

MOSFET

晶体管类型

2 N-Channel

场效应管特性

Standard

产品类别

MOSFET