Panjit PJW8N03_R2_00001

安装类型

THT

包装/外壳

SOT-223-3

供应商器件包装

SOT-223

MSL

n/a

Dimensions

7x15x19mm

RoHS

有

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

3 ns

Vgs th - Gate-Source Threshold Voltage

2.1 V

Pd - Power Dissipation

3 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.004339 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

7.8 nC

Rds On - Drain-Source Resistance

55 mOhms

Typical Turn-Off Delay Time

38 ns

Id - Continuous Drain Current

7.2 A

厂商

Panjit International Inc.

Power Dissipation (Max)

1.5W (Ta), 3W (Tc)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

5A (Ta), 7.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.1V @ 250µA

系列

MP3-X2

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

容差

±20 %

电容量

47.0 nF

子类别

MOSFETs

螺距

15 mm

技术

Si

电介质

MP

配置

Single

注意

n/a

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

38mOhm @ 5.6A, 10V

输入电容(Ciss)(Max)@Vds

343 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

7.8 nC @ 10 V

上升时间

40 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

场效应管特性

-

特征

X2

产品类别

MOSFET