Panjit PJX8603_R1_00001

包装/外壳

SOT-563-6

安装类型

表面贴装

供应商器件包装

SOT-563

材料

AL

RoHS

有

Vds - Drain-Source Breakdown Voltage

50 V

Typical Turn-On Delay Time

2.3 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

300 mW

Transistor Polarity

N-Channel, P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000212 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

950 pC

Rds On - Drain-Source Resistance

2.5 Ohms

Typical Turn-Off Delay Time

7 ns

Id - Continuous Drain Current

360 mA, 200 mA

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

360mA (Ta), 200mA (Ta)

厂商

Panjit International Inc.

Product Status

活跃

系列

1455

包装

MouseReel

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

技术

Si

配置

Dual

注意

Metal end Panels

通道数量

2 Channel

功率 - 最大

300mW (Ta)

场效应管类型

N and P-Channel Complementary

Rds On(Max)@Id,Vgs

1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V

不同 Id 时 Vgs(th)（最大值）

1V @ 250µA, 2.5V @ 250µA

输入电容(Ciss)(Max)@Vds

36pF @ 25V, 51pF @ 25V

门极电荷(Qg)(最大)@Vgs

0.95nC @ 4.5V, 1.1nC @ 4.5V

上升时间

20 ns

漏源电压 (Vdss)

50V, 60V

产品类别

MOSFET

晶体管类型

1 N-Channel, 1 P-Channel

场效应管特性

Standard

外壳类型

Multipurpose

产品类别

MOSFET

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