Panjit PSMP032N08NS1_T0_00601

安装类型

通孔

包装/外壳

TO-220-3

供应商器件包装

TO-220AB-L

Package

Tube

Base Product Number

PSMP032N08

Current - Continuous Drain (Id) @ 25℃

166A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

厂商

Panjit International Inc.

Power Dissipation (Max)

156W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

3.75 V

Pd - Power Dissipation

156 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000074 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

Panjit

Brand

Panjit

Qg - Gate Charge

103.5 nC

Rds On - Drain-Source Resistance

3.4 mOhms

RoHS

Details

Id - Continuous Drain Current

166 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

3.4mOhm @ 50A, 10V

不同 Id 时 Vgs(th)（最大值）

3.75V @ 250µA

输入电容(Ciss)(Max)@Vds

7430 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

76 nC @ 7 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

产品类别

MOSFET

场效应管特性

-

产品类别

MOSFET