Philips Semiconductors PHP9N60E
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PHP9N60E
1891-PHP9N60E
晶体管 - 特殊用途
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
1最小包装量--
PHP9N60E详情
Philips Semiconductors PHP9N60E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Rohs Code
无
Part Life Cycle Code
Transferred
Ihs Manufacturer
飞利浦半导体
Package Description
,
Drain Current-Max (ID)
8.7 A
Number of Elements
1
Operating Temperature-Max
150 °C
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
Tin/Lead (Sn/Pb)
Reach合规守则
unknown
配置
SINGLE
操作模式
增强型MOSFET
极性/通道类型
N-CHANNEL
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
156 W
PHP9N60E拓展信息
North American Philips Discrete Products Div
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
Philips Semiconductors
North American Philips Discrete Products Div
Philips Semiconductors
North American Philips Discrete Products Div
North American Philips Discrete Products Div
Philips Semiconductors







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