BSTS-17MX4FR详情
Raychem BSTS-17MX4FR重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-92-3
Emitter- Base Voltage VEBO
5 V
Pd - Power Dissipation
500 mW
Transistor Polarity
PNP
Maximum Operating Temperature
+ 150 C
DC Collector/Base Gain hfe Min
150
Collector-Emitter Saturation Voltage
90 mV
Unit Weight
0.008466 oz
Minimum Operating Temperature
-
Factory Pack QuantityFactory Pack Quantity
2000
Mounting Styles
通孔
Gain Bandwidth Product fT
100 MHz
Manufacturer
onsemi
Brand
onsemi / Fairchild
Maximum DC Collector Current
50 mA
RoHS
Details
Collector- Emitter Voltage VCEO Max
120 V
系列
KSA992
包装
弹药包
子类别
Transistors
技术
Si
配置
Single
产品类别
BJTs - Bipolar Transistors
集电极基极电压(VCBO)
120 V
连续集电极电流
- 50 mA
产品类别
Bipolar Transistors - BJT
BSTS-17MX4FR拓展信息








哦! 它是空的。