Renesas UPA2826T1S-E2-AT

包装/外壳

HWSON-8

安装类型

表面贴装

表面安装

YES

供应商器件包装

8-HWSON (3.3x3.3)

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

50 ns

Vgs th - Gate-Source Threshold Voltage

1.5 V

Pd - Power Dissipation

1.5 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Factory Pack QuantityFactory Pack Quantity

5000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

25 S

Channel Mode

Enhancement

Manufacturer

Renesas Electronics

Brand

Renesas Electronics

Qg - Gate Charge

37 nC

Rds On - Drain-Source Resistance

4.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

120 ns

Id - Continuous Drain Current

27 A

Package

Tray

Current - Continuous Drain (Id) @ 25℃

27A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 8V

厂商

Renesas Electronics America Inc

Power Dissipation (Max)

20W (Ta)

Product Status

活跃

Package Description

,

Manufacturer Package Code

PWSN0008JB-A8

Reflow Temperature-Max (s)

未说明

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

UPA2826T1S-E2-AT

Part Life Cycle Code

活跃

Samacsys Description

General Purpose Power MOSFETs Nch Single Power MOSFET 20V 27A 4.3mohm HWSON-8

Ihs Manufacturer

RENESAS ELECTRONICS CORP

Risk Rank

5.74

Part Package Code

HWSON

包装

Reel

操作温度

150°C

系列

-

JESD-609代码

e3

端子表面处理

Matte Tin (Sn)

子类别

MOSFETs

技术

Si

峰值回流焊温度（摄氏度）

未说明

引脚数量

8

Brand Name

Renesas

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.3mOhm @ 13.5A, 8V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

3610 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

37 nC @ 4 V

上升时间

94 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

±12V

极性/通道类型

N-CHANNEL

产品类别

MOSFET

晶体管类型

1 P-Channel

最大漏极电流 (Abs) (ID)

27 A

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

20 W

场效应管特性

-

产品类别

MOSFET

宽度

3.3 mm

高度

0.8 mm

长度

3.3 mm

达到SVHC

compliant