Renesas Electronics America 2SJ461-T2B-A
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2SJ461-T2B-A
2038-2SJ461-T2B-A
集成电路(IC)
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大陆
立即发货

Power MOSFETs for Automotive
1最小包装量--
2SJ461-T2B-A详情
Renesas Electronics America 2SJ461-T2B-A重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
3
晶体管元件材料
SILICON
Manufacturer Part Number
2SJ461-T2B-A
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Part Package Code
MM
Package Description
SMALL OUTLINE, R-PDSO-G3
Manufacturer Package Code
PLSP0003ZD-A3
Risk Rank
5.68
Drain Current-Max (ID)
0.1 A
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
T
未说明
无铅代码
有
ECCN 代码
EAR99
HTS代码
8541.21.00.95
端子位置
DUAL
终端形式
鸥翼
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
unknown
引脚数量
3
JESD-30代码
R-PDSO-G3
Brand Name
Renesas
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
晶体管应用
SWITCHING
极性/通道类型
P-CHANNEL
最大漏极电流 (Abs) (ID)
0.1 A
漏极-源极导通最大电阻
50 Ω
DS 击穿电压-最小值
50 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
0.2 W
2SJ461-T2B-A拓展信息
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America







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