Renesas Electronics America BA1L4M
- 收藏
- 对比
BA1L4M
2038-BA1L4M
集成电路(IC)
--
大陆
立即发货

Trans Digital BJT NPN 50V 100mA 3-Pin SST
1最小包装量--
BA1L4M详情
Renesas Electronics America BA1L4M重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Part Life Cycle Code
Obsolete
Ihs Manufacturer
NEC ELECTRONICS CORP
Package Description
IN-LINE, R-PSIP-T3
Risk Rank
5.52
Number of Elements
1
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Reflow Temperature-Max (s)
未说明
Turn-off Time-Max (toff)
6000 ns
Turn-on Time-Max (ton)
700 ns
Rohs Code
无
Manufacturer Part Number
BA1L4M
JESD-609代码
e0
ECCN 代码
EAR99
端子表面处理
锡铅
附加功能
BUILT-IN BIAS RESISTOR RATIO IS 1
HTS代码
8541.21.00.95
端子位置
SINGLE
终端形式
THROUGH-HOLE
峰值回流焊温度(摄氏度)
未说明
Reach合规守则
compliant
JESD-30代码
R-PSIP-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN RESISTOR
晶体管应用
SWITCHING
极性/通道类型
NPN
集电极电流-最大值(IC)
0.1 A
最小直流增益(hFE)
95
集电极-发射器电压-最大值
50 V
BA1L4M拓展信息
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America







哦! 它是空的。