Renesas Electronics America HAF2002
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HAF2002
2038-HAF2002
集成电路(IC)
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大陆
立即发货

Silicon N Channel MOS FET Series Power Switching
1最小包装量--
HAF2002详情
Renesas Electronics America HAF2002重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
Manufacturer Part Number
HAF2002
Part Life Cycle Code
活跃
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Risk Rank
5.34
Drain Current-Max (ID)
20 A
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
ECCN 代码
EAR99
附加功能
BUILT-IN OVER TEMPERATURE SHUT-DOWN CIRCUIT, LOGIC LEVEL COMPATIBLE
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
compliant
引脚数量
3
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
ISOLATED
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
JEDEC-95代码
TO-220AB
最大漏极电流 (Abs) (ID)
20 A
漏极-源极导通最大电阻
0.065 Ω
脉冲漏极电流-最大值(IDM)
40 A
DS 击穿电压-最小值
60 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
30 W
HAF2002拓展信息
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America
Renesas Electronics America







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