Renesas Electronics America Inc 2SD1163A-E
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2SD1163A-E
2038-2SD1163A-E
晶体管 - 双极性晶体管(BJT)- 单个
--
大陆
立即发货

POWER BIPOLAR TRANSISTOR NPN
--最小包装量--
2SD1163A-E详情
Renesas Electronics America Inc 2SD1163A-E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
工厂交货时间
1 Week
表面安装
NO
终端数量
3
晶体管元件材料
SILICON
厂商
Renesas Electronics America Inc
Package
Bulk
Product Status
活跃
Package Description
FLANGE MOUNT, R-PSFM-T3
Package Style
FLANGE MOUNT
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
150 °C
Rohs Code
有
Manufacturer Part Number
2SD1163A-E
Package Shape
RECTANGULAR
Manufacturer
Renesas Electronics Corporation
Number of Elements
1
Part Life Cycle Code
Obsolete
Ihs Manufacturer
RENESAS TECHNOLOGY CORP
Risk Rank
8.51
Part Package Code
TO-220AB
系列
*
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
THROUGH-HOLE
Reach合规守则
unknown
引脚数量
3
JESD-30代码
R-PSFM-T3
资历状况
不合格
配置
SINGLE
箱体转运
COLLECTOR
晶体管应用
AMPLIFIER
极性/通道类型
NPN
JEDEC-95代码
TO-220AB
集电极电流-最大值(IC)
7 A
最小直流增益(hFE)
25
集电极-发射器电压-最大值
150 V
2SD1163A-E拓展信息
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America Inc
Renesas Electronics America
Renesas







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