Renesas Electronics Corporation HAT2139H-EL-E
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HAT2139H-EL-E
2038-HAT2139H-EL-E
晶体管 - 特殊用途
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Description: Nch Single Power Mosfet 40V 20A 11.5Mohm Lfpak, LFPAK, /Embossed Tape
1最小包装量--
HAT2139H-EL-E详情
Renesas Electronics Corporation HAT2139H-EL-E重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
YES
终端数量
4
晶体管元件材料
SILICON
Rohs Code
有
Part Life Cycle Code
Obsolete
Ihs Manufacturer
RENESAS ELECTRONICS CORP
Part Package Code
LFPAK
Package Description
SMALL OUTLINE, R-PSSO-G4
Manufacturer Package Code
PTZZ0005DA
Drain Current-Max (ID)
20 A
Moisture Sensitivity Levels
1
Number of Elements
1
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
小概要
无铅代码
有
ECCN 代码
EAR99
端子位置
SINGLE
终端形式
鸥翼
峰值回流焊温度(摄氏度)
260
Reach合规守则
compliant
时间@峰值回流温度-最大值(s)
20
引脚数量
5
JESD-30代码
R-PSSO-G4
资历状况
不合格
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.015 Ω
脉冲漏极电流-最大值(IDM)
80 A
DS 击穿电压-最小值
40 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
最大耗散功率(Abs)
15 W
HAT2139H-EL-E拓展信息
Renesas Electronics Corporation
Renesas Electronics Corporation
Renesas Electronics Corporation
Renesas Electronics Corporation
Renesas Electronics Corporation
Renesas Electronics Corporation
Renesas Electronics Corporation
Renesas Electronics Corporation
Renesas Electronics Corporation
Renesas Electronics Corporation







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