Rochester Electronics 2N3819_Q
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2N3819_Q
2071-2N3819_Q
晶体管 - JFET
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2N3819_Q datasheet pdf and Transistors - JFETs product details from Rochester Electronics stock available at utmel
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2N3819_Q详情
Rochester Electronics 2N3819_Q重要参数规格及、参数值,及相似型号如下:
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- 参数名参数值全选
RoHS
Non-Compliant
包装
Bulk
最大功率耗散
350 mW
元素配置
Single
功率耗散
350 mW
连续放电电流(ID)
50 mA
栅极至源极电压(Vgs)
-25 V
漏源击穿电压
25 V
2N3819_Q拓展信息
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC







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