Rochester Electronics, LLC ECH8601M-TL-H
- 收藏
- 对比
ECH8601M-TL-H
2071-ECH8601M-TL-H
晶体管 - FET,MOSFET - 阵列
8-SMD, Flat Lead
大陆
立即发货

N-CHANNEL POWER MOSFET
1最小包装量--
ECH8601M-TL-H详情
Rochester Electronics, LLC ECH8601M-TL-H重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-SMD, Flat Lead
供应商器件包装
8-ECH
Current - Continuous Drain (Id) @ 25℃
8A Ta
操作温度
150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
场效应管类型
2 N-Channel (Dual) Common Drain
Rds On(Max)@Id,Vgs
23mOhm @ 4A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1.3V @ 1mA
门极电荷(Qg)(最大)@Vgs
7.5nC @ 4.5V
漏源电压 (Vdss)
24V
场效应管特性
Logic Level Gate, 2.5V Drive
RoHS状态
ROHS3 Compliant
ECH8601M-TL-H拓展信息
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC







哦! 它是空的。