Rochester Electronics, LLC IPG20N06S3L-35
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IPG20N06S3L-35
2071-IPG20N06S3L-35
晶体管 - FET,MOSFET - 阵列
8-PowerVDFN
大陆
立即发货

OPTLMOS N-CHANNEL POWER MOSFET
1最小包装量--
IPG20N06S3L-35详情
Rochester Electronics, LLC IPG20N06S3L-35重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerVDFN
供应商器件包装
PG-TDSON-8-4
Current - Continuous Drain (Id) @ 25℃
20A
操作温度
-55°C~175°C TJ
包装
Tape & Reel (TR)
系列
OptiMOS™
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
功率 - 最大
30W
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
35mOhm @ 11A, 10V
不同 Id 时 Vgs(th)(最大值)
2.2V @ 15μA
输入电容(Ciss)(Max)@Vds
1730pF @ 25V
门极电荷(Qg)(最大)@Vgs
23nC @ 10V
漏源电压 (Vdss)
55V
场效应管特性
逻辑电平门
RoHS状态
ROHS3 Compliant
IPG20N06S3L-35拓展信息
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC








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