Rochester Electronics LLC IRFD120
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IRFD120
2071-IRFD120
晶体管 - 特殊用途
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大陆
立即发货

1300mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
1最小包装量--
IRFD120详情
Rochester Electronics LLC IRFD120重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
表面安装
NO
Housing material
ABC plastic
终端数量
3
晶体管元件材料
SILICON
外壳材料
1
Part Life Cycle Code
活跃
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Drain Current-Max (ID)
1.3 A
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Gross weight
9.57
Transport packaging size/quantity
48*32*22.5/1500
Mounting hole size
19.5
Mounting method
soldering
Storage temperature
-20...+50 °C
Nominal voltage
48 V
类型
3-pole microphone socket on panel
端子位置
DUAL
终端形式
THROUGH-HOLE
深度
26 mm
Reach合规守则
unknown
JESD-30代码
R-PDIP-T3
资历状况
COMMERCIAL
Number of contacts
3
配置
SINGLE WITH BUILT-IN DIODE
操作模式
增强型MOSFET
箱体转运
DRAIN
晶体管应用
SWITCHING
极性/通道类型
N-CHANNEL
漏极-源极导通最大电阻
0.3 Ω
DS 击穿电压-最小值
100 V
场效应管技术
METAL-OXIDE SEMICONDUCTOR
高度
32
宽度
26 mm
IRFD120拓展信息
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC
Rochester Electronics LLC







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