Rochester Electronics, LLC NTGD4161PT1G
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NTGD4161PT1G
2071-NTGD4161PT1G
晶体管 - FET,MOSFET - 阵列
SOT-23-6 Thin, TSOT-23-6
大陆
立即发货

P-CHANNEL POWER MOSFET
1最小包装量--
NTGD4161PT1G详情
Rochester Electronics, LLC NTGD4161PT1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-23-6 Thin, TSOT-23-6
供应商器件包装
6-TSOP
Current - Continuous Drain (Id) @ 25℃
1.5A
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
功率 - 最大
600mW
场效应管类型
2 P-Channel (Dual)
Rds On(Max)@Id,Vgs
160mOhm @ 2.1A, 10V
不同 Id 时 Vgs(th)(最大值)
3V @ 250μA
输入电容(Ciss)(Max)@Vds
281pF @ 15V
门极电荷(Qg)(最大)@Vgs
7.1nC @ 10V
漏源电压 (Vdss)
30V
场效应管特性
逻辑电平门
RoHS状态
ROHS3 Compliant
NTGD4161PT1G拓展信息
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC







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