Rochester Electronics, LLC NTMFD4C85NT1G
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NTMFD4C85NT1G
2071-NTMFD4C85NT1G
晶体管 - FET,MOSFET - 阵列
8-PowerTDFN
大陆
立即发货

POWER FIELD-EFFECT TRANSISTOR
1最小包装量--
NTMFD4C85NT1G详情
Rochester Electronics, LLC NTMFD4C85NT1G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
8-PowerTDFN
供应商器件包装
8-DFN (5x6)
Current - Continuous Drain (Id) @ 25℃
15.4A 29.7A
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
功率 - 最大
1.13W
场效应管类型
2 N-Channel (Dual) Asymmetrical
Rds On(Max)@Id,Vgs
3mOhm @ 20A, 10V
不同 Id 时 Vgs(th)(最大值)
2.1V @ 250μA
输入电容(Ciss)(Max)@Vds
1960pF @ 15V
门极电荷(Qg)(最大)@Vgs
32nC @ 10V
漏源电压 (Vdss)
30V
场效应管特性
Standard
RoHS状态
ROHS3 Compliant
NTMFD4C85NT1G拓展信息
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC








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