Rochester Electronics, LLC PMDPB38UNE,115
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PMDPB38UNE,115
2071-PMDPB38UNE,115
晶体管 - FET,MOSFET - 阵列
6-UDFN Exposed Pad
大陆
立即发货

SMALL SIGNAL MOSFET
1最小包装量--
PMDPB38UNE,115详情
Rochester Electronics, LLC PMDPB38UNE,115重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
6-UDFN Exposed Pad
供应商器件包装
DFN2020-6
Current - Continuous Drain (Id) @ 25℃
4A
操作温度
-55°C~150°C TJ
包装
Tape & Reel (TR)
零件状态
Obsolete
湿度敏感性等级(MSL)
1 (Unlimited)
功率 - 最大
510mW
场效应管类型
2 N-Channel (Dual)
Rds On(Max)@Id,Vgs
46mOhm @ 3A, 4.5V
不同 Id 时 Vgs(th)(最大值)
1V @ 250μA
输入电容(Ciss)(Max)@Vds
268pF @ 10V
门极电荷(Qg)(最大)@Vgs
4.4nC @ 4.5V
漏源电压 (Vdss)
20V
场效应管特性
逻辑电平门
RoHS状态
ROHS3 Compliant
PMDPB38UNE,115拓展信息
Rochester Electronics
Rochester Electronics
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC
Rochester Electronics, LLC







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