ROHM Semiconductor BSM600D12P3G001

工厂交货时间

19 Weeks

包装/外壳

Module

安装类型

底座安装

供应商器件包装

Module

Minimum Isolation Voltage

2500 Vrms

Maximum Collector Cut-off Current

4 mA

Mounting

螺钉安装

Continuous Drain Current

600(A)

Drain-Source On-Volt

1200(V)

Operating Temperature Classification

汽车

Operating Temp Range

-40C to 175C

Gate-Source Voltage (Max)

22(V)

Channel Mode

Enhancement

Number of Elements

2

Rad Hardened

无

Continuous Drain Current Id

600A

Vr - Reverse Voltage

1200 V

Vds - Drain-Source Breakdown Voltage

1200 V

Typical Turn-On Delay Time

45 ns

Vgs th - Gate-Source Threshold Voltage

5.6 V

Pd - Power Dissipation

1570 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 6 V, + 22 V

Unit Weight

1.131 lbs

Minimum Operating Temperature

- 40 C

Factory Pack QuantityFactory Pack Quantity

4

Mounting Styles

螺钉安装

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

RoHS

Details

Typical Turn-Off Delay Time

240 ns

Id - Continuous Drain Current

358 A

Package

Bulk

Base Product Number

BSM600

Current - Continuous Drain (Id) @ 25℃

600A (Tc)

厂商

Rohm Semiconductor

Product Status

活跃

Package Description

,

Reflow Temperature-Max (s)

未说明

Rohs Code

有

Manufacturer Part Number

BSM600D12P3G001

Part Life Cycle Code

活跃

Ihs Manufacturer

ROHM CO LTD

Risk Rank

2.28

操作温度

-40 to 150 °C

系列

-

类型

功率MOSFET

子类别

Discrete Semiconductor Modules

技术

SiC

峰值回流焊温度（摄氏度）

未说明

Reach合规守则

compliant

引脚数量

11

工作电源电压

-

极性

N

功率耗散

2450(W)

功率 - 最大

2450W (Tc)

场效应管类型

2 N-Channel (Half Bridge)

Rds On(Max)@Id,Vgs

-

不同 Id 时 Vgs(th)（最大值）

5.6V @ 182mA

输入电容(Ciss)(Max)@Vds

31000pF @ 10V

门极电荷(Qg)(最大)@Vgs

-

上升时间

55 ns

漏源电压 (Vdss)

1200V (1.2kV)

产品类别

Discrete Semiconductor Modules

信道型

N

场效应管特性

Silicon Carbide (SiC)

产品

功率MOSFET模块

产品类别

Discrete Semiconductor Modules