ROHM Semiconductor RGS80TSX2DGC11
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RGS80TSX2DGC11
2078-RGS80TSX2DGC11
晶体管 - IGBT - 单个
TO-247N-3
大陆
立即发货

Trans IGBT Chip N-CH 1200V 80A 555W 3-Pin(3 Tab) TO-247N Tube
--最小包装量--
RGS80TSX2DGC11详情
ROHM Semiconductor RGS80TSX2DGC11重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
Term: ¼in Solder Lug Quick-Connect, w/Stud Can
包装/外壳
TO-247N-3
供应商器件包装
TO-247N
Manufacturer
BARKER MICROFARADS INC
RoHS
Y
Maximum Gate Emitter Voltage
±30V
Package Type
TO-247N
Maximum Collector Emitter Voltage
1200 V
MSL
-
Collector-Emitter Saturation Voltage
1.7V
Pd - Power Dissipation
555 W
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 40 C
Factory Pack QuantityFactory Pack Quantity
30
Continuous Collector Current at 25 C
80 A
Mounting Styles
通孔
Brand
ROHM 半导体
Continuous Collector Current Ic Max
80 A
Collector- Emitter Voltage VCEO Max
1.2 kV
Package
Tube
Current-Collector (Ic) (Max)
80 A
厂商
Rohm Semiconductor
Product Status
活跃
Test Conditions
600V, 40A, 10Ohm, 15V
包装
2.156in x 1.312in Oval Case
操作温度
-40°C ~ 175°C (TJ)
系列
-
容差
±3%
电容量
405uF
子类别
IGBTs
技术
Si
引脚数量
3
配置
Single
电压
370VAC
功率耗散
555W
输入类型
Standard
功率 - 最大
555 W
产品类别
IGBT晶体管
电压 - 集射极击穿(最大值)
1200 V
不同 Vge、Ic 时 Vce(on)(最大值)
2.1V @ 15V, 40A
连续集电极电流
80A
IGBT类型
沟渠现场停车
闸门收费
104 nC
集极脉冲电流(Icm)
120 A
Td(开/关)@25°C
49ns/199ns
开关能量
3mJ (on), 3.1mJ (off)
反向恢复时间(trr)
198 ns
产品类别
IGBT晶体管
RGS80TSX2DGC11拓展信息
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
ROHM Semiconductor
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